Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Gabriel Ferro, Maher Soueidan, Olivier Kim-Hak, Jacques Dazord, François Cauwet, Bilal Nsouli

Abstract: We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on Si face 6H-SiC substrates, on-axis and...

Authors: Maher Soueidan, Olivier Kim-Hak, Gabriel Ferro, Nada Habka, Bilal Nsouli

Abstract: The growth kinetics of 3C-SiC heteroepitaxial layers on α-SiC substrates by Vapour-Liquid-Solid (VLS) mechanism in Ge-Si melts was...

Authors: Olivier Kim-Hak, Maher Soueidan, Gabriel Ferro, Olivier Dezellus, Ariadne Andreadou, Davy Carole, Efstathios K. Polychroniadis, Jean Claude Viala

Abstract: Twin-free 3C-SiC layers were recently obtained by Vapour-Liquid-Solid mechanism on a a-SiC(0001) substrate using Si-Ge melt. The formation...

Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Yvon Cordier

Abstract: We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer...

Authors: Andrea Severino, Christopher L. Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E. Saddow

Abstract: In this work a comparison between atmospheric pressure (AP) and low pressure (LP) carbonization as the first step in the growth process of...

Authors: Andrea Severino, Corrado Bongiorno, Ruggero Anzalone, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Gaetano Foti, Francesco La Via

Abstract: This study refers, through different microscopies, about the carbonization effects on differently oriented Si surfaces. A statistical study...

Authors: Byeung C. Kim, Michael A. Capano

Abstract: Cubic silicon carbide (3C-SiC) growth using Pendeo-epitaxy technique was successfully achieved on Si(001) substrates. 3C-SiC was grown by...

Authors: Günter Wagner, J. Schwarzkopf, M. Schmidbauer, R. Fornari

Abstract: 3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the...

Authors: Yoshimine Kato, Kazuo Sakumoto

Abstract: SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using...

Authors: Marc Portail, M. Nemoz, Marcin Zielinski, Thierry Chassagne

Abstract: The structural and morphological modifications induced by the carbonization stage upon 3C-SiC heteroepitaxial films grown on (111) and (100)...


Showing 51 to 60 of 330 Paper Titles