Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Alkyoni Mantzari, Frédéric Mercier, Maher Soueidan, Didier Chaussende, Gabriel Ferro, Efstathios K. Polychroniadis

Abstract: The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds...

Authors: Didier Chaussende, Frédéric Mercier, Roland Madar, Michel Pons

Abstract: We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds...

Authors: Albert A. Burk, Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, Kenneth G. Irvine, Adrian R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, Brett A. Hull, Anant K. Agarwal

Abstract: The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer,...

Authors: Michel Pons, Shin Ichi Nishizawa, Peter J. Wellmann, Elisabeth Blanquet, Didier Chaussende, Jean Marc Dedulle, Roland Madar

Abstract: Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently...

Authors: Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Masayuki Abe, Adolf Schöner, Mietek Bakowski, Per Ericsson, Gerhard Pensl

Abstract: In 3C-SiC MOSFETs, planar defects like anti-phase boundaries (APBs) and stacking-faults (SFs) reduce the breakdown voltage and induce...

Authors: Christian Hecht, Bernd Thomas, René A. Stein, Peter Friedrichs

Abstract: In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW...

Authors: Joseph J. Sumakeris, Jason Henning, Michael J. O'Loughlin, Saptharishi Sriram, Vijay Balakrishna

Abstract: We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel...

Authors: Jie Zhang, Janice Mazzola, Swapna G. Sunkari, Gray Stewart, Paul B. Klein, Rachael M. Ward, E.R. Glaser, Kok Keong Lew, D. Kurt Gaskill, Igor Sankin, Volodymyr Bondarenko, David Null, David C. Sheridan, Michael S. Mazzola

Abstract: Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has...

Authors: Stefano Leone, Henrik Pedersen, Anne Henry, Olof Kordina, Erik Janzén

Abstract: The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed...

Authors: Masahiko Ito, L. Storasta, Hidekazu Tsuchida

Abstract: A vertical hot-wall type epi-reactor that makes it possible to simultaneously achieve both a high rate of epitaxial growth and large-area...


Showing 21 to 30 of 330 Paper Titles