Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs

Yukiyasu Nakao; Shoyu Watanabe; Naruhisa Miura; Masayuki Imaizumi; Tatsuo Oomori

doi:10.4028/www.scientific.net/MSF.600-603.1123

Paper Titles

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
p.1107

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
p.1111

Normally-Off 4H-SiC Power MOSFET with Submicron Gate
p.1115

(11-20) Face Channel MOSFET with Low On-Resistance
p.1119

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
p.1123

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
p.1127

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
p.1131

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
p.1135

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
p.1139

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Investigation into Short-Circuit Ruggedness of 1.2...

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs

Abstract:

The shout-circuit ruggedness of prototype 1.2kV SiC MOSFETs has been investigated. The short-circuit measurements were carried out at 25 °C and 125 °C with a dc bus voltage of 800 V and an on/off state gate voltage of +20/-10 V. The small difference in tfail between 25 °C and 125 °C indicates that the destructive breakdown occurs at temperatures much higher than 125 °C. The temperature at destructive breakdown estimated from the Wunsch-Bell formula is about 1400 °C. At such high temperatures, intrinsic carriers are increased markedly and generated heat leads to the destructive breakdown. tfail of all the SiC-MOSFETs studied is longer than 10 μs, meaning that the short-circuit ruggedness satisfies system requirements. These results show that the SiC-MOSFETs are promising for power electronics applications.