RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.

Abstract:

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We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate using ion implantation for the channel and contact regions. Our device design used a thin, highly doped channel layer, which was implanted at single energy to improve the device’s RF characteristics. The electrical characteristics of the ion-implanted MESFET annealed at 1700°C were better than those of the ion-implanted MESFET annealed at 1300°C. The fabricated ion-implanted MESFET has a maximum transconductance of 32.8 mS/mm and an fT/fmax of 9.1/26.2 GHz. The saturated output power was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventional epitaxial MESFET with a recessed gate.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1107-1110

DOI:

10.4028/www.scientific.net/MSF.600-603.1107

Citation:

S. Katakami et al., "RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate. ", Materials Science Forum, Vols. 600-603, pp. 1107-1110, 2009

Online since:

September 2008

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