RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.

S. Katakami; Shuichi Ono; Manabu Arai

doi:10.4028/www.scientific.net/MSF.600-603.1107

Paper Titles

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
p.1091

Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
p.1095

6H-SiC Lateral JFETs for Analog Integrated Circuits
p.1099

Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
p.1103

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
p.1107

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
p.1111

Normally-Off 4H-SiC Power MOSFET with Submicron Gate
p.1115

(11-20) Face Channel MOSFET with Low On-Resistance
p.1119

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
p.1123

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603RF Characteristics of a Fully Ion-Implanted MESFET...

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.

Abstract:

We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate using ion implantation for the channel and contact regions. Our device design used a thin, highly doped channel layer, which was implanted at single energy to improve the device’s RF characteristics. The electrical characteristics of the ion-implanted MESFET annealed at 1700°C were better than those of the ion-implanted MESFET annealed at 1300°C. The fabricated ion-implanted MESFET has a maximum transconductance of 32.8 mS/mm and an fT/fmax of 9.1/26.2 GHz. The saturated output power was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventional epitaxial MESFET with a recessed gate.