Normally-Off 4H-SiC Power MOSFET with Submicron Gate

Kenya Yamashita; Kyoko Egashira; Koichi Hashimoto; Kunimasa Takahashi; Osamu Kusumoto; Kazuya Utsunomiya; Masashi Hayashi; Masao Uchida; Chiaki Kudo; Makoto Kitabatake; Shin Hashimoto

doi:10.4028/www.scientific.net/MSF.600-603.1115

Paper Titles

6H-SiC Lateral JFETs for Analog Integrated Circuits
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Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
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RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
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Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
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Normally-Off 4H-SiC Power MOSFET with Submicron Gate
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(11-20) Face Channel MOSFET with Low On-Resistance
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Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
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Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
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950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
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Normally-Off 4H-SiC Power MOSFET with Submicron Gate

Abstract:

In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate with channel length Lg of 0.5μm by a self-aligned implantation and aδ-doped epitaxial channel layer to successfully demonstrate the following features. The normally-off characteristics was confirmed from room temperature to 200°C where the therethold voltages Vth were 2.9V at room temperature and 1.6V at 200°C, respectively. The Ron,sp were 4.6mΩcm2 at room temperature and 9.2mΩcm2 at 200°C, respectively, while the breakdown voltage was greater than 1400V .