Normally-Off 4H-SiC Power MOSFET with Submicron Gate
In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate with channel length Lg of 0.5μm by a self-aligned implantation and aδ-doped epitaxial channel layer to successfully demonstrate the following features. The normally-off characteristics was confirmed from room temperature to 200°C where the therethold voltages Vth were 2.9V at room temperature and 1.6V at 200°C, respectively. The Ron,sp were 4.6mΩcm2 at room temperature and 9.2mΩcm2 at 200°C, respectively, while the breakdown voltage was greater than 1400V .
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
K. Yamashita et al., "Normally-Off 4H-SiC Power MOSFET with Submicron Gate", Materials Science Forum, Vols. 600-603, pp. 1115-1118, 2009