6H-SiC Lateral JFETs for Analog Integrated Circuits
This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
X. A. Fu et al., "6H-SiC Lateral JFETs for Analog Integrated Circuits", Materials Science Forum, Vols. 600-603, pp. 1099-1102, 2009