Paper Title:
6H-SiC Lateral JFETs for Analog Integrated Circuits
  Abstract

This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1099-1102
DOI
10.4028/www.scientific.net/MSF.600-603.1099
Citation
X. A. Fu, A. Patil, P. G. Neudeck, G. M. Beheim, S. Garverick, M. Mehregany, "6H-SiC Lateral JFETs for Analog Integrated Circuits", Materials Science Forum, Vols. 600-603, pp. 1099-1102, 2009
Online since
September 2008
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Price
$35.00
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