6H-SiC Lateral JFETs for Analog Integrated Circuits

Abstract:

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This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1099-1102

DOI:

10.4028/www.scientific.net/MSF.600-603.1099

Citation:

X. A. Fu et al., "6H-SiC Lateral JFETs for Analog Integrated Circuits", Materials Science Forum, Vols. 600-603, pp. 1099-1102, 2009

Online since:

September 2008

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Price:

$35.00

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