6H-SiC Lateral JFETs for Analog Integrated Circuits

Xiao An Fu; Amita Patil; Philip G. Neudeck; Glenn M. Beheim; Steven Garverick; Mehran  Mehregany

doi:10.4028/www.scientific.net/MSF.600-603.1099

Paper Titles

Silicon Carbide Differential Amplifiers for High-Temperature Sensing
p.1083

SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
p.1087

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
p.1091

Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
p.1095

6H-SiC Lateral JFETs for Analog Integrated Circuits
p.1099

Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
p.1103

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
p.1107

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
p.1111

Normally-Off 4H-SiC Power MOSFET with Submicron Gate
p.1115

HomeMaterials Science ForumMaterials Science Forum Vols. 600-6036H-SiC Lateral JFETs for Analog Integrated...

6H-SiC Lateral JFETs for Analog Integrated Circuits

Abstract:

This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.