Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Y. Zhang; Kuang Sheng; Ming Su; Jian Hui Zhao; Peter Alexandrov; Leonid Fursin

doi:10.4028/www.scientific.net/MSF.600-603.1091

Paper Titles

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)
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Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
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Silicon Carbide Differential Amplifiers for High-Temperature Sensing
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SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
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Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
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Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
p.1095

6H-SiC Lateral JFETs for Analog Integrated Circuits
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Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
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RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
p.1107

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Development of High Temperature Lateral HV and LV...

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Abstract:

A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform. Both room temperature and 300 oC characterizations are presented. The HV JFET shows a specific-on resistance of 12.8 mΩ·cm2 and is capable of conducting current larger than 3 A at room temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observed when temperature varies from room temperature to 300 oC. The measured increase of specific-on resistance with temperature due to a reduction of electron mobility agrees with the numerical prediction. The first demonstration of SiC power integrated circuits (PIC) is also reported, which shows 5 MHz switching at VDS of 200 V and on-state current of 0.4 A.

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

1091-1094

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.1091

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Online since:

September 2008

Authors:

Y. Zhang, Kuang Sheng, Ming Su, Jian Hui Zhao, Peter Alexandrov, Leonid Fursin

Keywords:

High-Temperature, Junction Field Effect Transistor (JFET), Power Integrated Circuits, Silicon Carbide (SiC)

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