Silicon Carbide Differential Amplifiers for High-Temperature Sensing

Abstract:

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This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design considerations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing and for frequency readout from a micromechanical resonator are also presented.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1083-1086

DOI:

10.4028/www.scientific.net/MSF.600-603.1083

Citation:

A. Patil et al., "Silicon Carbide Differential Amplifiers for High-Temperature Sensing ", Materials Science Forum, Vols. 600-603, pp. 1083-1086, 2009

Online since:

September 2008

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Price:

$35.00

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