Silicon Carbide Differential Amplifiers for High-Temperature Sensing

Amita Patil; Xiao An Fu; Philip G. Neudeck; Glenn M. Beheim; Mehran  Mehregany; Steven Garverick

doi:10.4028/www.scientific.net/MSF.600-603.1083

Paper Titles

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
p.1067

1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.1071

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)
p.1075

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
p.1079

Silicon Carbide Differential Amplifiers for High-Temperature Sensing
p.1083

SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
p.1087

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
p.1091

Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
p.1095

6H-SiC Lateral JFETs for Analog Integrated Circuits
p.1099

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Silicon Carbide Differential Amplifiers for High-Temperature Sensing

Abstract:

This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design considerations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing and for frequency readout from a micromechanical resonator are also presented.