Fast Switching Characteristics of 4H-SiC RESURF-Type JFET

Abstract:

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400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the static and switching characteristics were carried out. The on-resistance was 0.86 W. The turn-on time (ton) and the turn-off time (toff) were 8ns and 10 ns, respectively. The fabricated JFETs showed low on-resistance and fast switching characteristics. 4H-SiC RESURF-type JFETs, which is a sort of lateral transistor, are preferable to a module configuration of switching devices. Moreover, they are promising for application to DC power supplies with higher efficiency and smaller size owing to their low on-resistance and fast switching characteristics.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1095-1098

DOI:

10.4028/www.scientific.net/MSF.600-603.1095

Citation:

K. Fujikawa et al., "Fast Switching Characteristics of 4H-SiC RESURF-Type JFET ", Materials Science Forum, Vols. 600-603, pp. 1095-1098, 2009

Online since:

September 2008

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Price:

$35.00

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