Fast Switching Characteristics of 4H-SiC RESURF-Type JFET

Kazuhiro Fujikawa; Kenichi Sawada; Takashi Tsuno; Hideto Tamaso; Shin Harada; Yasuo Namikawa

doi:10.4028/www.scientific.net/MSF.600-603.1095

Paper Titles

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
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Silicon Carbide Differential Amplifiers for High-Temperature Sensing
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SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
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Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
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Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
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6H-SiC Lateral JFETs for Analog Integrated Circuits
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Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
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RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
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Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
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Fast Switching Characteristics of 4H-SiC RESURF-Type JFET

Abstract:

400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the static and switching characteristics were carried out. The on-resistance was 0.86 W. The turn-on time (ton) and the turn-off time (toff) were 8ns and 10 ns, respectively. The fabricated JFETs showed low on-resistance and fast switching characteristics. 4H-SiC RESURF-type JFETs, which is a sort of lateral transistor, are preferable to a module configuration of switching devices. Moreover, they are promising for application to DC power supplies with higher efficiency and smaller size owing to their low on-resistance and fast switching characteristics.