SiC Lateral Trench JFET for Harsh-Environment Wireless Systems

Abstract:

SiC Lateral Trench JFET (LTJFET) technology is demonstrated as a promising candidate for use in high-temperature wireless telemetry systems. 4H-SiC LTJFETs were designed, fabricated and characterized for DC, and small-signal AC and RF performance at different case temperatures. Four-fold drain current reduction was observed at 460°C as compared to RT measurements. The measured threshold voltage shift was less than 2.3 mV/°C from 21°C to 460°C. A simple common source amplifier built using a fabricated device demonstrated stable small-signal AC performance after 100 hrs of operation at 450°C. Small-signal RF measurements were carried out on the packaged devices at different temperatures. GMax above 8 dB was measured over the L-band frequency range at RT. The average degradation of small-signal power gain measured at f=250 MHz did not exceed 0.0125 dB/ °C over the temperature ranging from 21°C to 365°C.

• Periodical: Materials Science Forum (Volumes 600-603)
• Pages: 1087-1090
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.1087
• Online since: September 2008
• Authors: Igor Sankin, Volodymyr Bondarenko, David C. Sheridan, Michael S. Mazzola, Jeff B. Casady, John Fraley, Marcelo Schupbach
• Keywords: High-Temperature, LTJFET, Silicon Carbide (SiC), Wireless Telemetry

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