Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient

Abstract:

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This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors (JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of electrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectric passivation, and packaging technology that enabled such 500 °C durability are briefly described. Key JFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, as well as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over the first 2000 hours of 500 °C operational testing.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1079-1082

DOI:

10.4028/www.scientific.net/MSF.600-603.1079

Citation:

D. J. Spry et al., "Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient", Materials Science Forum, Vols. 600-603, pp. 1079-1082, 2009

Online since:

September 2008

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Price:

$35.00

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