Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient

Abstract:

This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors (JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of electrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectric passivation, and packaging technology that enabled such 500 °C durability are briefly described. Key JFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, as well as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over the first 2000 hours of 500 °C operational testing.

• Periodical: Materials Science Forum (Volumes 600-603)
• Pages: 1079-1082
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.1079
• Online since: September 2008
• Authors: David J. Spry, Philip G. Neudeck, Liang Yu Chen, Glenn M. Beheim, Robert S. Okojie, Carl W. Chang, Roger D. Meredith, Terry L. Ferrier, Laura J. Evans
• Keywords: 6H-SiC, Amplifier, Differential Amplifier, Durability, High-Temperature, Junction Field Effect, Junction Field Effect Transistor (JFET), Packaging, Reliability, Transistor

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