Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors (JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of electrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectric passivation, and packaging technology that enabled such 500 °C durability are briefly described. Key JFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, as well as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over the first 2000 hours of 500 °C operational testing.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
D. J. Spry et al., "Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient", Materials Science Forum, Vols. 600-603, pp. 1079-1082, 2009