Silicon Carbide Vertical JFET Operating at High Temperature

Konstantin Vassilevski; Keith P. Hilton; Nicolas G. Wright; Michael J. Uren; A.G. Munday; Irina P. Nikitina; A.J. Hydes; Alton B. Horsfall; C. Mark Johnson

doi:10.4028/www.scientific.net/MSF.600-603.1063

Paper Titles

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
p.1047

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
p.1051

High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
p.1055

Normally-Off 4H-SiC Vertical JFET with Large Current Density
p.1059

Silicon Carbide Vertical JFET Operating at High Temperature
p.1063

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
p.1067

1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.1071

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)
p.1075

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
p.1079

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Silicon Carbide Vertical JFET Operating at High Temperature

Abstract:

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.