Silicon Carbide Vertical JFET Operating at High Temperature

Abstract:

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Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1063-1066

DOI:

10.4028/www.scientific.net/MSF.600-603.1063

Citation:

K. Vassilevski et al., "Silicon Carbide Vertical JFET Operating at High Temperature", Materials Science Forum, Vols. 600-603, pp. 1063-1066, 2009

Online since:

September 2008

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Price:

$35.00

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