Normally-Off 4H-SiC Vertical JFET with Large Current Density

Haruka Shimizu; Yasuo Onose; Tomoyuki Someya; Hidekatsu Onose; Natsuki Yokoyama

doi:10.4028/www.scientific.net/MSF.600-603.1059

Paper Titles

Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation
p.1043

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
p.1047

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
p.1051

High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
p.1055

Normally-Off 4H-SiC Vertical JFET with Large Current Density
p.1059

Silicon Carbide Vertical JFET Operating at High Temperature
p.1063

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
p.1067

1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.1071

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)
p.1075

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Normally-Off 4H-SiC Vertical JFET with Large...

Normally-Off 4H-SiC Vertical JFET with Large Current Density

Abstract:

We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold voltage by forming the abrupt junction between the gate and the channel.