High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Abstract:

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In this work we report the most recent high-temperature long-term reliability results of the 600 V/14 A, 4H-SiC vertical-channel junction field-effect transistors (VJFETs). Two groups (A and B) devices were subjected to different thermal and electrical stresses. One device (Group A) reached 12,000 hours of continuous switching without a single failure. Four devices in Group A were thermally stressed at 250 °C over 4,670 hours in air, for which standard deviation of the specific on-resistance (RONSP) in linear region at gate bias (VGS) of 3 V were < 4.1% throughout the entire duration time. The off-state characteristics were evaluated by high temperature reverse bias (HTRB) tests. Three devices (Group A) were biased at 50% rated BVDS at 250 °C for 2,278 hours. A higher reverse bias at 80 % rated BVDS was then applied to 14 devices (group B) at 200 °C for 1,000 hours. Variations of the leakage current were negligible throughout the entire HTRB test for all tested devices.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1051-1054

DOI:

10.4028/www.scientific.net/MSF.600-603.1051

Citation:

L. Cheng et al., "High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications", Materials Science Forum, Vols. 600-603, pp. 1051-1054, 2009

Online since:

September 2008

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Price:

$35.00

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