Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes

Shinobu Onoda; Takeshi Ohshima; Toshio Hirao; Shigeomi Hishiki; Naoya Iwamoto; Kazu Kojima; K. Kawano

doi:10.4028/www.scientific.net/MSF.600-603.1039

Paper Titles

Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.1023

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p⁺n 4H-SiC Diodes
p.1027

Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
p.1031

Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer
p.1035

Transient Response to High Energy Heavy Ions in 6H-SiC n⁺p Diodes
p.1039

Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation
p.1043

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
p.1047

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
p.1051

High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
p.1055

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Transient Response to High Energy Heavy Ions in 6H-SiC n⁺p Diodes

Abstract:

Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.