Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes
Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
S. Onoda et al., "Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes ", Materials Science Forum, Vols. 600-603, pp. 1039-1042, 2009