Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes

Abstract:

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Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1039-1042

DOI:

10.4028/www.scientific.net/MSF.600-603.1039

Citation:

S. Onoda et al., "Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes ", Materials Science Forum, Vols. 600-603, pp. 1039-1042, 2009

Online since:

September 2008

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Price:

$35.00

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