Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer

Kenichi Ohtsuka; Yoichiro Tarui; Tomokatsu Watanabe; Keiko Fujihira; Yoshinori Matsuno

doi:10.4028/www.scientific.net/MSF.600-603.1035

Paper Titles

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Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
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Room Temperature Annealing Effects on Leakage Current of Ion Implanted p⁺n 4H-SiC Diodes
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Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
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Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer
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Transient Response to High Energy Heavy Ions in 6H-SiC n⁺p Diodes
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Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation
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1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
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High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
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Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer

Abstract:

Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type surface region. The contact resistance is calculated from the comparison to I-V characteristic of Schottky structure to a p-SiC layer with a sufficiently low Schottky barrier height. Even in the relatively low contact resistance rc of 10-4 Wcm2, non-ohmic current component is observed in Schottky structure to p-SiC and the increase of forward voltage of pin diodes is fairly small. Forward voltage of pin diodes increases in the pin diodes with contact resistance rc over 10-4 Wcm2. The same behavior is also observed irrespective of a time constant of carriers, and doping concentration and thickness of a drift layer.