Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

Naoya Iwamoto; Shinobu Onoda; Shigeomi Hishiki; Takeshi Ohshima; Makoto Murakami; I. Nakano; K. Kawano

doi:10.4028/www.scientific.net/MSF.600-603.1043

Paper Titles

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p⁺n 4H-SiC Diodes
p.1027

Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
p.1031

Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer
p.1035

Transient Response to High Energy Heavy Ions in 6H-SiC n⁺p Diodes
p.1039

Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation
p.1043

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
p.1047

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
p.1051

High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
p.1055

Normally-Off 4H-SiC Vertical JFET with Large Current Density
p.1059

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Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

Abstract:

6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1×1015 cm-2. The degradation of CCE was observed after irradiation at fluences above 5×1015 cm-2.