Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

Tarek Ben Salah; Samien  Risaletto; Christophe Raynaud; Kamel  Besbes; Dominique Bergogne; Dominique Planson; Hervé Morel

doi:10.4028/www.scientific.net/MSF.600-603.1031

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Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

Abstract:

A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter with resistive load. The experimental set-up allows to measure the current and voltage transient characteristics without noise and influence of high parasitic wiring. Experimental results are compared with device simulations and a good correlation is found.