Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Abstract:

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Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1019-1022

DOI:

10.4028/www.scientific.net/MSF.600-603.1019

Citation:

K. Zekentes et al., "Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes", Materials Science Forum, Vols. 600-603, pp. 1019-1022, 2009

Online since:

September 2008

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Price:

$35.00

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