Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Konstantinos Zekentes; Volodymyr V. Basanets; Mykola S. Boltovets; Valentyn A. Kryvutsa; Volodymyr O. Orechovskij; Vasyl I. Simonchuk; Alexander V. Zorenko; Leonid P. Romanov; Aleksey V. Kirillov; Edwige Bano; Nicolas Camara

doi:10.4028/www.scientific.net/MSF.600-603.1019

Paper Titles

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

Self-Heating of 4H-SiC PiN Diodes at High Current Densities
p.1007

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
p.1011

Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm²
p.1015

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
p.1019

Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.1023

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p⁺n 4H-SiC Diodes
p.1027

Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
p.1031

Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer
p.1035

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Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Abstract:

Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.