Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
K. Zekentes et al., "Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes", Materials Science Forum, Vols. 600-603, pp. 1019-1022, 2009