Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes

H. Vang; Sigo Scharnholz; Christophe Raynaud; Mihai Lazar; Gontran Pâques; Dominique Planson

doi:10.4028/www.scientific.net/MSF.600-603.1011

Paper Titles

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

Self-Heating of 4H-SiC PiN Diodes at High Current Densities
p.1007

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
p.1011

Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm²
p.1015

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
p.1019

Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
p.1023

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p⁺n 4H-SiC Diodes
p.1027

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Impact of RIE Etching on the Breakdown Voltage of...

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes

Abstract:

This paper presents a comparison of the reverse characteristics of mesa terminated PiN diodes fabricated on n- and p-type 4H-SiC substrates. For n-type the attained breakdown voltages are higher and for p-type lower than expected. This is likely to be explained by the presence of negative charges at the interface between passivation oxide and SiC. Supported by XPS data we come to the conclusion that the RIE process creates surface charges which have an impact on the breakdown voltage of the fabricated diodes.