Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

Toru Hiyoshi; Tsutomu Hori; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.600-603.995

Paper Titles

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

Self-Heating of 4H-SiC PiN Diodes at High Current Densities
p.1007

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
p.1011

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Bevel Mesa Combined with Implanted Junction...

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

Abstract:

A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly vertical side-wall at the edge of pn junction and rounded corner at mesa bottom, has been formed by reactive ion etching (RIE). The junction termination extension (JTE) region has been optimized by device simulation, and simulated breakdown voltage has been compared with experimental results. The locations of electric field crowding and diode breakdown have been discussed.

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Materials Science Forum (Volumes 600-603)

Pages:

995-998

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.995

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Online since:

September 2008

Authors:

Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto

Keywords:

Bevel Mesa, Breakdown Voltage, Field Crowding, Junction Termination Extension (JTE), PiN Diode

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