Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly vertical side-wall at the edge of pn junction and rounded corner at mesa bottom, has been formed by reactive ion etching (RIE). The junction termination extension (JTE) region has been optimized by device simulation, and simulated breakdown voltage has been compared with experimental results. The locations of electric field crowding and diode breakdown have been discussed.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
T. Hiyoshi et al., "Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes", Materials Science Forum, Vols. 600-603, pp. 995-998, 2009