3.3 kV-10A 4H-SiC PiN Diodes

Pierre Brosselard; Nicolas Camara; Jawad ul Hassan; Xavier Jordá; Peder Bergman; Josep Montserrat; José Millan

doi:10.4028/www.scientific.net/MSF.600-603.991

Paper Titles

Device Simulation Model for Transient Analysis of SiC-SBD
p.975

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

Self-Heating of 4H-SiC PiN Diodes at High Current Densities
p.1007

HomeMaterials Science ForumMaterials Science Forum Vols. 600-6033.3 kV-10A 4H-SiC PiN Diodes

3.3 kV-10A 4H-SiC PiN Diodes

Abstract:

An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The processed PiN diodes have been characterized in forward and reverse mode at different temperature. The larger diodes (2.56 mm2) have a very low leakage current around 20 nA @ 500V for temperatures up to 300°C. A performant yield (68%) was obtained on these larger diodes have a breakdown voltage superior to 500V. Electroluminescence characteristics have been done on these devices and they show that there is no generation of Stacking Faults during the bipolar conduction.