Device Simulation Model for Transient Analysis of SiC-SBD

Masaaki Tomita; Yusuke Maeyama; M. Sato; Y. Fukuda; F. Honma; J. Ono; Masaaki Shimizu; Hiroaki Iwakuro

doi:10.4028/www.scientific.net/MSF.600-603.975

Paper Titles

Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
p.959

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
p.963

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
p.967

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
p.971

Device Simulation Model for Transient Analysis of SiC-SBD
p.975

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

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Device Simulation Model for Transient Analysis of SiC-SBD

Abstract:

We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD under the condition of forward surge current because the maximum of the temperature inside SiC-SBD arises up to above 425 K. Other mobility models seem to be mostly inadequate because they are corresponding to the experimental condition under the temperature below 425 K.