Device Simulation Model for Transient Analysis of SiC-SBD
We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD under the condition of forward surge current because the maximum of the temperature inside SiC-SBD arises up to above 425 K. Other mobility models seem to be mostly inadequate because they are corresponding to the experimental condition under the temperature below 425 K.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
M. Tomita et al., "Device Simulation Model for Transient Analysis of SiC-SBD", Materials Science Forum, Vols. 600-603, pp. 975-978, 2009