Device Simulation Model for Transient Analysis of SiC-SBD

Abstract:

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We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD under the condition of forward surge current because the maximum of the temperature inside SiC-SBD arises up to above 425 K. Other mobility models seem to be mostly inadequate because they are corresponding to the experimental condition under the temperature below 425 K.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

975-978

DOI:

10.4028/www.scientific.net/MSF.600-603.975

Citation:

M. Tomita et al., "Device Simulation Model for Transient Analysis of SiC-SBD", Materials Science Forum, Vols. 600-603, pp. 975-978, 2009

Online since:

September 2008

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Price:

$35.00

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