Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Abstract:

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The effect of the doping concentration and space of both p-grid and FLR on the electrical performances of 4H-SiC JBS diode has been investigated. A 4H-SiC JBS diode with the p-grid space of 3um, the FLR space of 3um, and the doping concentration of 5E18cm-3 showed the highest blocking voltage of 1500V.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

959-962

DOI:

10.4028/www.scientific.net/MSF.600-603.959

Citation:

I. H. Kang et al., "Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process", Materials Science Forum, Vols. 600-603, pp. 959-962, 2009

Online since:

September 2008

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Price:

$35.00

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