Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

In Ho Kang; Jae Yeol Song; Sung Jae Joo; Wook Bahng; Sang Cheol Kim; Nam Kyun Kim

doi:10.4028/www.scientific.net/MSF.600-603.959

Paper Titles

High-Current 10 kV SiC JBS Rectifier Performance
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5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application
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10 kV Silicon Carbide Junction Barrier Schottky Rectifier
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Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
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Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
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Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
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Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
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Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
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Device Simulation Model for Transient Analysis of SiC-SBD
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Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Abstract:

The effect of the doping concentration and space of both p-grid and FLR on the electrical performances of 4H-SiC JBS diode has been investigated. A 4H-SiC JBS diode with the p-grid space of 3um, the FLR space of 3um, and the doping concentration of 5E18cm-3 showed the highest blocking voltage of 1500V.