10 kV Silicon Carbide Junction Barrier Schottky Rectifier

Ty McNutt; Stephen Van Campen; Andy  Walker; Kathy Ha; Chris Kirby; Marc Sherwin; Ranbir Singh; Harold Hearne

doi:10.4028/www.scientific.net/MSF.600-603.951

Paper Titles

Reliability Aspects of High Voltage 4H-SiC JBS Diodes
p.935

1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
p.939

High-Current 10 kV SiC JBS Rectifier Performance
p.943

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application
p.947

10 kV Silicon Carbide Junction Barrier Schottky Rectifier
p.951

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
p.955

Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
p.959

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
p.963

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
p.967

HomeMaterials Science ForumMaterials Science Forum Vols. 600-60310 kV Silicon Carbide Junction Barrier Schottky...

10 kV Silicon Carbide Junction Barrier Schottky Rectifier

Abstract:

The development of 10 kV silicon carbide (SiC) MOSFETs and Junction Barrier Schottky (JBS) diodes for application to a 13.8kV 2.7 MVA Solid State Power Substation (SSPS) is shown. The design of half-bridge power modules has extensively used simulation, from electron level device simulations to the system level trade studies, to develop the most efficient module for use in the SSPS. In the work presented within, numerical simulations and experimental results are shown to demonstrate the design and operation of 10 kV JBS diodes. It is shown that JBS diodes at 10 kV can reduce 31% of the switching losses at 20 kHz than the fastest SiC PiN diodes.