Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Abstract:

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Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by 1c of 8H poly-type and showed high reverse currents. SF formed by 1c of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

963-966

DOI:

10.4028/www.scientific.net/MSF.600-603.963

Citation:

S. Harada et al., "Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode", Materials Science Forum, Vols. 600-603, pp. 963-966, 2009

Online since:

September 2008

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$35.00

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