Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Shin Harada; Yasuo Namikawa; Ryuichi Sugie

doi:10.4028/www.scientific.net/MSF.600-603.963

Paper Titles

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Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
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Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
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Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
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Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
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Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
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Device Simulation Model for Transient Analysis of SiC-SBD
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Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
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Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Abstract:

Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by 1c of 8H poly-type and showed high reverse currents. SF formed by 1c of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.