Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

Kenichi Kuroda; Yoshinori Matsuno; Kenichi Ohtsuka; Naoki Yutani; Shozo Shikama; Hiroaki Sumitani

doi:10.4028/www.scientific.net/MSF.600-603.979

Paper Titles

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
p.963

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
p.967

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
p.971

Device Simulation Model for Transient Analysis of SiC-SBD
p.975

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Distribution of Forward Voltage of SiC Schottky...

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

Abstract:

The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that the Schottky barrier height (Φb) can be stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate thickness.