Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

Abstract:

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The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that the Schottky barrier height (Φb) can be stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate thickness.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

979-982

DOI:

10.4028/www.scientific.net/MSF.600-603.979

Citation:

K. Kuroda et al., "Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process ", Materials Science Forum, Vols. 600-603, pp. 979-982, 2009

Online since:

September 2008

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Price:

$35.00

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