Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Ho Keun  Song; Jong Ho Lee; Myeong Sook Oh; Jeong Hyun Moon; Han Seok Seo; Jeong Hyuk Yim; Sun Young Kwon; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.600-603.971

Paper Titles

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
p.955

Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
p.959

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
p.963

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
p.967

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
p.971

Device Simulation Model for Transient Analysis of SiC-SBD
p.975

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

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Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Abstract:

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.