Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Abstract:

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This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode’s electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

983-986

DOI:

10.4028/www.scientific.net/MSF.600-603.983

Citation:

G. Brezeanu et al., "Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes", Materials Science Forum, Vols. 600-603, pp. 983-986, 2009

Online since:

September 2008

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Price:

$35.00

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