Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Gheorghe Brezeanu; M. Brezeanu; C. Boianceanu; F. Udrea; G.A.J. Amaratunga; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.600-603.983

Paper Titles

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
p.967

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
p.971

Device Simulation Model for Transient Analysis of SiC-SBD
p.975

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Impact of High-k Dielectrics on Breakdown...

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Abstract:

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode’s electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes.