Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack

A. Kumta; E. Rusli; J.H. Xia

doi:10.4028/www.scientific.net/MSF.600-603.987

Paper Titles

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
p.971

Device Simulation Model for Transient Analysis of SiC-SBD
p.975

Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
p.979

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes
p.983

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

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Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack

Abstract:

Silicon dioxide (SiO2), one of the commonly used dielectrics for field plate terminated 4H-SiC devices suffers from high electric field and premature breakdown due to its low dielectric constant (k). This problem can be addressed by using high-k dielectrics such as AlN that will reduce the field and improve the breakdown voltage (VB). Sputter deposited amorphous AlN films with a thickness (tAl) ranging from 0.05 μm to 1.3 μm have been deposited on 4H-SiC n-type samples with a 10 μm thick epilayer doped with nitrogen to a concentration of 1.7–3.5×1015/cm3 . The VB of the diodes was found to improve to as much as 1500 V at tAl = 0.8 μm, which is more than 2 times the VB of unterminated structures which have a premature breakdown between 600-700 V due to field enhancement at the diode periphery.