Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes

Peter A. Losee; Y. Wang; Can Hua Li; Santosh K. Sharma; I. Bhat; T. Paul Chow; Ronald J. Gutmann

doi:10.4028/www.scientific.net/MSF.600-603.1003

Paper Titles

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO₂ and Sputter Deposited AlN Dielectric Stack
p.987

3.3 kV-10A 4H-SiC PiN Diodes
p.991

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
p.995

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
p.999

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
p.1003

Self-Heating of 4H-SiC PiN Diodes at High Current Densities
p.1007

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
p.1011

Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm²
p.1015

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
p.1019

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Comparative Evaluation of Anode Layers on the...

Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes

Abstract:

The impact of anode layers on the electrical characteristics of 10kV 4H-SiC PiN diodes has been evaluated in this work. Co-fabricated diodes with various epitaxial anode layer designs as well as those employing P+ implanted injecting layers are used to experimentally investigate the device conduction mechanisms. The role of the injecting layer is demonstrated via electrical characteristics and numerical simulations, showing the importance of maintaining sufficient carrier recombination lifetime in the device anode region.