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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Characterization of Schottky Diodes on 4H-SiC with...

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

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Abstract:

The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

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Silicon Carbide and Related Materials 2007

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

967-970

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.967

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Online since:

September 2008

Authors:

Mitsutaka Nakamura, Yoshikazu Hashino, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi, Masahiro Yoshimoto

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Schottky Diode, Stacking Fault, Sublimation Epitaxy

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Creative Commons CC BY 4.0

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[10] [20] [30] [40] [50] [2] o off Yield (%) Barrier Height (eV) 1. 0 1. 1 1. 2 1. 3 1. 4 1. 5 1. 6.

[10] [20] [30] [40] [50] [4] o off Yield (%) 1. 0 1. 1 1. 2 1. 3 1. 4 1. 5 1. 6.

[10] [20] [30] [40] [50] [6] o off Yield (%) 1. 0 1. 1 1. 2 1. 3 1. 4 1. 5 1. 6.

[10] [20] [30] [40] [50] [8] o off Yield (%) Figure 5 Dependence of Schottky barrier height on the off-axis angle of the substrate 1. 0 1. 1 1. 2 1. 3.

[10] [20] [30] [40] [50] [2] o off Yield (%) Ideality Factor 1. 0 1. 1 1. 2 1. 3.

[10] [20] [30] [40] [50] [4] o off Yield (%) 1. 0 1. 1 1. 2 1. 3.

[10] [20] [30] [40] [50] [6] o off Yield (%) 1. 0 1. 1 1. 2 1. 3.

[10] [20] [30] [40] [50] [8] o off Yield (%) Figure 6 Dependence of ideality factor on the off-axis angle of the substrate -7 -6 -5 -4 -3 -2 -1 0 1 2 3.

[20] [40] [60] [80] 100.

[2] o off Yield (%) Log(IL(A/cm.

[2] ) -7 -6 -5 -4 -3 -2 -1 0 1 2 3.

[20] [40] [60] [80] 100.

[4] o off Yield (%) -7 -6 -5 -4 -3 -2 -1 0 1 2 3.

[20] [40] [60] [80] 100.

[6] o off Yield (%) -7 -6 -5 -4 -3 -2 -1 0 1 2 3.

[20] [40] [60] [80] 100.

[8] o off Yield (%) Figure 7 Dependence of reverse-bias current density at.

[10] V on the off-axis of the substrate.