Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

Abstract:

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The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

967-970

DOI:

10.4028/www.scientific.net/MSF.600-603.967

Citation:

M. Nakamura et al., "Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy", Materials Science Forum, Vols. 600-603, pp. 967-970, 2009

Online since:

September 2008

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