High-Current 10 kV SiC JBS Rectifier Performance

Abstract:

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Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented. Over a temperature range of 30 to 200°C, the forward current-voltage curves show a normal Schottky rectifier relationship and the reverse current-voltage curves show typical PiN blocking. When operated in reverse-blocking at 125°C and 8kV, the 10A JBS rectifiers are notably stable at less than 5μA of leakage current, despite the large active area of the devices.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

943-946

DOI:

10.4028/www.scientific.net/MSF.600-603.943

Citation:

E. A. Imhoff and K. D. Hobart, "High-Current 10 kV SiC JBS Rectifier Performance ", Materials Science Forum, Vols. 600-603, pp. 943-946, 2009

Online since:

September 2008

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Price:

$35.00

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