High-Current 10 kV SiC JBS Rectifier Performance

Abstract:

Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented. Over a temperature range of 30 to 200°C, the forward current-voltage curves show a normal Schottky rectifier relationship and the reverse current-voltage curves show typical PiN blocking. When operated in reverse-blocking at 125°C and 8kV, the 10A JBS rectifiers are notably stable at less than 5μA of leakage current, despite the large active area of the devices.

• Periodical: Materials Science Forum (Volumes 600-603)
• Pages: 943-946
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.943
• Online since: September 2008
• Authors: Eugene A. Imhoff, Karl D. Hobart
• Keywords: High Current, High Voltage (HV), Junction Barrier Schottky (JBS) Diode, Rectifier, Reliability, Schottky

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