High-Current 10 kV SiC JBS Rectifier Performance
Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented. Over a temperature range of 30 to 200°C, the forward current-voltage curves show a normal Schottky rectifier relationship and the reverse current-voltage curves show typical PiN blocking. When operated in reverse-blocking at 125°C and 8kV, the 10A JBS rectifiers are notably stable at less than 5μA of leakage current, despite the large active area of the devices.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
E. A. Imhoff and K. D. Hobart, "High-Current 10 kV SiC JBS Rectifier Performance ", Materials Science Forum, Vols. 600-603, pp. 943-946, 2009