For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch
p.901
Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
p.907
Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
p.913
Applications-Based Design of SiC Technology
p.919
New Applications in Power Electronics Based on SiC Power Devices
p.925
Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
p.931
Reliability Aspects of High Voltage 4H-SiC JBS Diodes
p.935
1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
p.939
High-Current 10 kV SiC JBS Rectifier Performance
p.943

New Applications in Power Electronics Based on SiC Power Devices

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2007 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

925-930

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.925

Citation:

Cite this paper

Online since:

September 2008

Authors:

Hervé Morel, Dominique Bergogne, Dominique Planson, Brunp Allard, Régis Meuret

Keywords:

High Voltage (HV), High-Temperature, Junction Field Effect Transistor (JFET), Power Electronics, SiC Device

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2009 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.