Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance

Kenji Fukuda; Shinsuke Harada; Junji Senzaki; Mitsuo Okamoto; Yasunori Tanaka; Akimasa Kinoshita; Ryouji Kosugi; Kazu Kojima; Makoto Kato; Atsushi Shimozato; Kenji Suzuki; Yusuke Hayashi; Kazuto Takao; Tomohisa Kato; Shin Ichi Nishizawa; Tsutomu Yatsuo; Hajime Okumura; Hiromichi Ohashi; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.600-603.907

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Critical Technical Issues in High Voltage SiC Power Devices
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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch
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Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
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Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
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Applications-Based Design of SiC Technology
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New Applications in Power Electronics Based on SiC Power Devices
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Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Challenges of 4H-SiC MOSFETs on the C(000-1) Face...

Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance

Abstract:

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.