Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter

Makoto Kitabatake; M. Tagome; S. Kazama; K. Yamashita; K. Hashimoto; Kunimasa Takahashi; O. Kusumoto; Kazuya Utsunomiya; Masashi Hayashi; M. Uchida; R. Ikegami; C. Kudo; S. Hashimoto

doi:10.4028/www.scientific.net/MSF.600-603.913

Paper Titles

Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
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Critical Technical Issues in High Voltage SiC Power Devices
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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch
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Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
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Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
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Applications-Based Design of SiC Technology
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New Applications in Power Electronics Based on SiC Power Devices
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Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
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Reliability Aspects of High Voltage 4H-SiC JBS Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Normally-Off 1400V/30A 4H-SiC DACFET and its...

Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter

Abstract:

Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics even at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7 mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kW DC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated using the SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically using the SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT.