Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter

Abstract:

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Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics even at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7 mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kW DC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated using the SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically using the SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

913-918

DOI:

10.4028/www.scientific.net/MSF.600-603.913

Citation:

M. Kitabatake et al., "Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter ", Materials Science Forum, Vols. 600-603, pp. 913-918, 2009

Online since:

September 2008

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Price:

$35.00

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