Paper Title:
Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
  Abstract

Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics even at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7 mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kW DC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated using the SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically using the SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
913-918
DOI
10.4028/www.scientific.net/MSF.600-603.913
Citation
M. Kitabatake, M. Tagome, S. Kazama, K. Yamashita, K. Hashimoto, K. Takahashi, O. Kusumoto, K. Utsunomiya, M. Hayashi, M. Uchida, R. Ikegami, C. Kudo, S. Hashimoto, "Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter ", Materials Science Forum, Vols. 600-603, pp. 913-918, 2009
Online since
September 2008
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