Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltage of less than 4 V are described. Performance comparisons are made to a similarly rated 10 kV 4H-SiC PiN diode. The JBS diodes show a significant improvement in reverse recovery stored charge as compared to PiN diodes, showing half of the stored charge at 25°C and a quarter of the stored charge at 125°C when switched to 3 kV blocking. These large area JBS diodes were also employed to demonstrate the tremendous advances that have recently been made in 4H-SiC substrate quality.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
B. A. Hull et al., "Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers ", Materials Science Forum, Vols. 600-603, pp. 931-934, 2009