Applications-Based Design of SiC Technology

Nicolas G. Wright; C. Mark Johnson; Alton B. Horsfall; Cyril Buttay; Konstantin Vassilevski; W.S. Loh; R. Skuriat; P. Agyakwa

doi:10.4028/www.scientific.net/MSF.600-603.919

Paper Titles

Critical Technical Issues in High Voltage SiC Power Devices
p.895

SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch
p.901

Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
p.907

Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
p.913

Applications-Based Design of SiC Technology
p.919

New Applications in Power Electronics Based on SiC Power Devices
p.925

Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
p.931

Reliability Aspects of High Voltage 4H-SiC JBS Diodes
p.935

1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
p.939

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Applications-Based Design of SiC Technology

Applications-Based Design of SiC Technology

Abstract:

The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best achieved by the adoption of co-design techniques in which the optimisation of the SiC device is performed in parallel to that of the package and the overall application. This paper considers suitable techniques for this co-design and describes new approaches to the development of SiC technology for practical applications.