Reliability Aspects of High Voltage 4H-SiC JBS Diodes

Pierre Brosselard; Nicolas Camara; Xavier Jordá; Miquel Vellvehi; Edwige Bano; José Millan; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.600-603.935

Paper Titles

Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
p.913

Applications-Based Design of SiC Technology
p.919

New Applications in Power Electronics Based on SiC Power Devices
p.925

Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
p.931

Reliability Aspects of High Voltage 4H-SiC JBS Diodes
p.935

1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
p.939

High-Current 10 kV SiC JBS Rectifier Performance
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5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application
p.947

10 kV Silicon Carbide Junction Barrier Schottky Rectifier
p.951

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Reliability Aspects of High Voltage 4H-SiC JBS Diodes

Abstract:

1.2 kV and 3.5 kV JBS diodes have been fabricated using the same technology process. After 50 hours of DC stress, 1.2 kV diodes do not exhibit any degradation in forward mode whereas the 3.5 kV JBS diodes show a degradation after ten hours. This behaviour has been confirmed by the formation of Stacking Faults clearly illustrated by electroluminescence microscopy in 3.5 kV JBS diodes, whereas it is not the case for the 1.2 kV JBS diodes.