Reliability Aspects of High Voltage 4H-SiC JBS Diodes
1.2 kV and 3.5 kV JBS diodes have been fabricated using the same technology process. After 50 hours of DC stress, 1.2 kV diodes do not exhibit any degradation in forward mode whereas the 3.5 kV JBS diodes show a degradation after ten hours. This behaviour has been confirmed by the formation of Stacking Faults clearly illustrated by electroluminescence microscopy in 3.5 kV JBS diodes, whereas it is not the case for the 1.2 kV JBS diodes.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
P. Brosselard et al., "Reliability Aspects of High Voltage 4H-SiC JBS Diodes", Materials Science Forum, Vols. 600-603, pp. 935-938, 2009