1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Yasunori Tanaka; Koji Yano; Mitsuo Okamoto; Akio Takatsuka; Kazuo Arai; Tsutomu Yatsuo

doi:10.4028/www.scientific.net/MSF.600-603.1071

Paper Titles

High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
p.1055

Normally-Off 4H-SiC Vertical JFET with Large Current Density
p.1059

Silicon Carbide Vertical JFET Operating at High Temperature
p.1063

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
p.1067

1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.1071

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)
p.1075

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
p.1079

Silicon Carbide Differential Amplifiers for High-Temperature Sensing
p.1083

SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
p.1087

HomeMaterials Science ForumMaterials Science Forum Vols. 600-6031270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction...

1270V, 1.21mΩ·cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Abstract:

We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the breakdown voltage VBR of 1270 V at the gate voltage VGS of –12 V and the specific on-resistance RonS of 1.21 mΩ·cm2 at VGS = 2.5 V. The turn-off behaviors of BGSITs strongly depend on the source length WS, which is the distance between the gate electrodes. The rise time tr of BGSIT for WS = 1,070 μm is 395 nsec, while that for WS = 210 μm is 70nsec. From the 3D computer simulations, we confirmed that the difference in turn-off behavior came from the time delay in potential barrier formation in channel region because of high p+ gate resistivity. The turn-off behaviors also depend on the operation temperature, especially for long WS. On the other hand, the turn-on behaviors hardly depend on the WS and temperature.