Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs

Abstract:

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Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using passivation oxides with different interface trap densities. By using a passivation oxide with a reduced interface trap density, grown in a sodium containing ambient, it was possible to achieve a very high continous wave output power density of the device: 8 W/mm at 3 GHz and 1 dB compression.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1103-1106

DOI:

10.4028/www.scientific.net/MSF.600-603.1103

Citation:

P. Å. Nilsson et al., "Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs", Materials Science Forum, Vols. 600-603, pp. 1103-1106, 2009

Online since:

September 2008

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Price:

$35.00

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