Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs

Per Åke Nilsson; Mattias Sudow; Fredrik Allerstam; Kristoffer Andersson; E.Ö. Sveinbjörnsson; Hans Hjelmgren; Niklas Rorsman

doi:10.4028/www.scientific.net/MSF.600-603.1103

Paper Titles

SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
p.1087

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
p.1091

Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
p.1095

6H-SiC Lateral JFETs for Analog Integrated Circuits
p.1099

Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
p.1103

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
p.1107

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
p.1111

Normally-Off 4H-SiC Power MOSFET with Submicron Gate
p.1115

(11-20) Face Channel MOSFET with Low On-Resistance
p.1119

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Influence of Passivation Oxide Properties on SiC...

Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs

Abstract:

Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using passivation oxides with different interface trap densities. By using a passivation oxide with a reduced interface trap density, grown in a sodium containing ambient, it was possible to achieve a very high continous wave output power density of the device: 8 W/mm at 3 GHz and 1 dB compression.