950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

Kevin Matocha; Zachary Stum; Steve Arthur; Greg Dunne; Ljubisa Stevanovic

doi:10.4028/www.scientific.net/MSF.600-603.1131

Paper Titles

Normally-Off 4H-SiC Power MOSFET with Submicron Gate
p.1115

(11-20) Face Channel MOSFET with Low On-Resistance
p.1119

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
p.1123

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
p.1127

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
p.1131

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
p.1135

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
p.1139

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
p.1143

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
p.1147

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950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

Abstract:

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.