950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

Abstract:

Article Preview

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1131-1134

DOI:

10.4028/www.scientific.net/MSF.600-603.1131

Citation:

K. Matocha et al., "950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability ", Materials Science Forum, Vols. 600-603, pp. 1131-1134, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.