950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
K. Matocha et al., "950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability ", Materials Science Forum, Vols. 600-603, pp. 1131-1134, 2009