Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Sei Hyung Ryu; Fatima Husna; Sarah K. Haney; Qing Chun Jon Zhang; Robert E. Stahlbush; Anant K. Agarwal

doi:10.4028/www.scientific.net/MSF.600-603.1127

Paper Titles

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
p.1111

Normally-Off 4H-SiC Power MOSFET with Submicron Gate
p.1115

(11-20) Face Channel MOSFET with Low On-Resistance
p.1119

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
p.1123

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
p.1127

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
p.1131

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
p.1135

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
p.1139

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
p.1143

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Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Abstract:

This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high voltage 4H-SiC power devices. To show the effects, IV characteristics of a 4H-SiC 10 kV DMOSFET and a 4H-SiC 4 kV BJT have been evaluated before and after the induction of stacking faults in the drift epilayer. For both devices, significant increases in forward voltage drops, as well as marked increases in leakage currents have been observed. The results suggest that injection of minority carriers in majority carrier devices should be avoided at all times.