Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Abstract:

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This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high voltage 4H-SiC power devices. To show the effects, IV characteristics of a 4H-SiC 10 kV DMOSFET and a 4H-SiC 4 kV BJT have been evaluated before and after the induction of stacking faults in the drift epilayer. For both devices, significant increases in forward voltage drops, as well as marked increases in leakage currents have been observed. The results suggest that injection of minority carriers in majority carrier devices should be avoided at all times.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1127-1130

DOI:

10.4028/www.scientific.net/MSF.600-603.1127

Citation:

S. H. Ryu et al., "Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs ", Materials Science Forum, Vols. 600-603, pp. 1127-1130, 2009

Online since:

September 2008

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$35.00

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