1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Hyung Seok Lee; Martin Domeij; Carl Mikael Zetterling; Reza Ghandi; Mikael Östling; Fredrik Allerstam; E.Ö. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.600-603.1151

Paper Titles

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
p.1135

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
p.1139

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
p.1143

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
p.1147

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
p.1151

1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
p.1155

4H-SiC Bipolar Junction Transistors with a Current Gain of 108
p.1159

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs
p.1163

Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications
p.1167

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1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Abstract:

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp_on)of 5.2 mΩcm2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop of VCE=2V at IC=15 A (JC=460 A/cm2).