1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Abstract:

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This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp_on)of 5.2 mΩcm2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop of VCE=2V at IC=15 A (JC=460 A/cm2).

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1151-1154

DOI:

10.4028/www.scientific.net/MSF.600-603.1151

Citation:

H. S. Lee et al., "1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance ", Materials Science Forum, Vols. 600-603, pp. 1151-1154, 2009

Online since:

September 2008

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$35.00

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