Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs

Abstract:

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This paper presents a simulation study on the thermal effects in 4H-SiC NPN BJTs. Simulation results show several important effects on the BJT characteristics such as base contact locations, current gain reduction due to high level injection in the base at high current densities, and the non-uniform current distribution due to long fingers and poor contact resistance. A DC spice model with temperature effects is created. The IVs of the model are in good agreement with measurement.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1163-1166

DOI:

10.4028/www.scientific.net/MSF.600-603.1163

Citation:

C. F. Huang and C. Y. Tseng, "Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs", Materials Science Forum, Vols. 600-603, pp. 1163-1166, 2009

Online since:

September 2008

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Price:

$35.00

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