Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs

Chih Fang Huang; Chien Yuen Tseng

doi:10.4028/www.scientific.net/MSF.600-603.1163

Paper Titles

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
p.1147

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
p.1151

1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
p.1155

4H-SiC Bipolar Junction Transistors with a Current Gain of 108
p.1159

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs
p.1163

Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications
p.1167

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
p.1171

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
p.1175

Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
p.1179

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Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs

Abstract:

This paper presents a simulation study on the thermal effects in 4H-SiC NPN BJTs. Simulation results show several important effects on the BJT characteristics such as base contact locations, current gain reduction due to high level injection in the base at high current densities, and the non-uniform current distribution due to long fingers and poor contact resistance. A DC spice model with temperature effects is created. The IVs of the model are in good agreement with measurement.