Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters

Yoshitaka Sugawara; Shuuji Ogata; Yoichi Miyanagi; Katsunori Asano; Shinichi Okada; Atsushi Tanaka; Koji Nakayama; Toru Izumi

doi:10.4028/www.scientific.net/MSF.600-603.1179

Paper Titles

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs
p.1163

Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications
p.1167

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
p.1171

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
p.1175

Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
p.1179

A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching
p.1183

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
p.1187

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
p.1191

SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
p.1195

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Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters

Abstract:

To reduce the switching power losses of SiC bipolar devices, an electron irradiation lifetime control method was investigated and was successfully applied to the development of 200kVA full SiC inverters, in which SiCGTs and SiC pn diodes irradiated electrons were used at the condition required to minimize inverter power loss.