Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters

Abstract:

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To reduce the switching power losses of SiC bipolar devices, an electron irradiation lifetime control method was investigated and was successfully applied to the development of 200kVA full SiC inverters, in which SiCGTs and SiC pn diodes irradiated electrons were used at the condition required to minimize inverter power loss.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1179-1182

DOI:

10.4028/www.scientific.net/MSF.600-603.1179

Citation:

Y. Sugawara et al., "Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters", Materials Science Forum, Vols. 600-603, pp. 1179-1182, 2009

Online since:

September 2008

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Price:

$35.00

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