Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175°C, respectively.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Y. Sui et al., "Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs ", Materials Science Forum, Vols. 600-603, pp. 1191-1194, 2009