Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

Yang Sui; James A. Cooper; X. Wang; Ginger G. Walden

doi:10.4028/www.scientific.net/MSF.600-603.1191

Paper Titles

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
p.1175

Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
p.1179

A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching
p.1183

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
p.1187

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
p.1191

SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
p.1195

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
p.1199

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
p.1203

Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
p.1207

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Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

Abstract:

We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175°C, respectively.