Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes

W.S. Loh; John P.R. David; Stanislav I. Soloviev; H.Y. Cha; Peter M. Sandvik; J.S. Ng; C. Mark Johnson

doi:10.4028/www.scientific.net/MSF.600-603.1207

Paper Titles

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
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SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
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Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
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4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
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Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
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Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
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Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
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The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
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High Power-Density SiC Converter
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Avalanche Multiplication and Impact Ionisation in...

Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes

Abstract:

The hole dominated avalanche multiplication characteristics of 4H-SiC Separate Absorption and Multiplication avalanche photodiodes (SAM-APDs) were determined experimentally and modeled using a local multiplication model. The 0.5x 0.5mm2 diodes had very low dark current and exhibited sharp, uniform breakdown at about 580V. The data agree with modeling result using extrapolated impact ionization coefficients reported by Ng et al. and is probably valid for electric fields as low as ~0.9MV/cm at room temperature provided that both the C-V measurements and electric field determination in this work are correct. The packaged devices demonstrate a positive temperature coefficient of breakdown voltage for temperatures ranging from 100K to 300K which is a desired feature for extreme environment applications.