Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes

Abstract:

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The hole dominated avalanche multiplication characteristics of 4H-SiC Separate Absorption and Multiplication avalanche photodiodes (SAM-APDs) were determined experimentally and modeled using a local multiplication model. The 0.5x 0.5mm2 diodes had very low dark current and exhibited sharp, uniform breakdown at about 580V. The data agree with modeling result using extrapolated impact ionization coefficients reported by Ng et al. and is probably valid for electric fields as low as ~0.9MV/cm at room temperature provided that both the C-V measurements and electric field determination in this work are correct. The packaged devices demonstrate a positive temperature coefficient of breakdown voltage for temperatures ranging from 100K to 300K which is a desired feature for extreme environment applications.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1207-1210

DOI:

10.4028/www.scientific.net/MSF.600-603.1207

Citation:

W.S. Loh et al., "Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes", Materials Science Forum, Vols. 600-603, pp. 1207-1210, 2009

Online since:

September 2008

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$35.00

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