SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application

Sudip K. Mazumder; Tirthajyoti Sarkar

doi:10.4028/www.scientific.net/MSF.600-603.1195

Paper Titles

Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
p.1179

A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching
p.1183

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
p.1187

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
p.1191

SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
p.1195

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
p.1199

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
p.1203

Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
p.1207

Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
p.1211

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603SiC Based Optically-Gated High-Power Solid-State...

SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application

Abstract:

Hybrid SiC pulsed-power switch (having bipolar transistor structure) with 5 kV breakdown voltage and 1 kA peak current rating has been designed, which can be triggered optically using a GaAs or SiC front-end triggering structure with a rise time < 20 ns and for sub-microsecond pulse-widths. Structural details and physics-based simulation results are presented. It is shown, that GaAs triggering structure reduces the optical-triggering power requirement significantly without sacrificing switching speed as compared to a SiC optical-triggering structure.