SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application

Abstract:

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Hybrid SiC pulsed-power switch (having bipolar transistor structure) with 5 kV breakdown voltage and 1 kA peak current rating has been designed, which can be triggered optically using a GaAs or SiC front-end triggering structure with a rise time < 20 ns and for sub-microsecond pulse-widths. Structural details and physics-based simulation results are presented. It is shown, that GaAs triggering structure reduces the optical-triggering power requirement significantly without sacrificing switching speed as compared to a SiC optical-triggering structure.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1195-1198

DOI:

10.4028/www.scientific.net/MSF.600-603.1195

Citation:

S. K. Mazumder and T. Sarkar, "SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application ", Materials Science Forum, Vols. 600-603, pp. 1195-1198, 2009

Online since:

September 2008

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Price:

$35.00

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