Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

Philip G. Neudeck; David J. Spry; Andrew J. Trunek; Laura J. Evans; Liang Yu Chen; Gary W. Hunter; D. Androjna

doi:10.4028/www.scientific.net/MSF.600-603.1199

Paper Titles

A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching
p.1183

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
p.1187

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
p.1191

SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
p.1195

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
p.1199

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
p.1203

Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
p.1207

Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
p.1211

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
p.1215

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Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

Abstract:

This paper reports on initial results from the first device tested of a “second generation” Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With proper selection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20 ppm was achieved. A stable sensor current gain of 125 ± 11 standard deviation was demonstrated during 250 hours of cyclic test exposures to 0.5% H2 and N2/air.